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Memory

Memory, which is commonly referred to as RAM (Random Access Memory), is a temporary (Volatile) storage area utilized by the CPU.
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AQD-D3L2GN16-SQ1
MEMORY MODULE, 2G DDR3-1600 256X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$29.00

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AQD-D3L4GN16-SG1
MEMORY MODULE, 4G DDR3-1600 512X8 1.35V & 1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$36.00

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AQD-D3L8GN16-SG1
MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$62.00

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96D4-16G2933ER-MI
Micron 16G DDR4-2933 288Pin 2Gx4 1.2V Registered
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

US$107.00

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96D4-16G3200NN-MI
Micron 16B DDR4-3200 288Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

US$89.00

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96D4-32G2933ER-MI
Micron 32G DDR4-2933 288Pin 2Gx4 1.2V Registered
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

US$223.00

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96D4-4G3200NN-MI
Micron 4GB DDR4-3200 288Pin 512Mx16 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

US$26.00

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96D4-8G2933ER-MI
Micron 8G DDR4 2933 288PIN 1GbX8 REG 1.2V
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

US$86.00

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96D4-8G3200NN-MI
Micron 8GB DDR4-3200 288Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

US$47.00

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