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DDR4 Memory

DDR4 is a high-speed dynamic random-access memory which internally configured as an 8-bank DRAM and the device uses an 8n-prefetch architecture to achieve high-speed operation.
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96D4-16G2933ER-MI
Micron 16G DDR4-2933 288Pin 2Gx4 1.2V Registered
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

US$138.00

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96D4-16G3200NN-MI
Micron 16B DDR4-3200 288Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

US$110.00

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96D4-32G2933ER-MI
Micron 32G DDR4-2933 288Pin 2Gx4 1.2V Registered
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

US$250.00

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96D4-4G3200NN-MI
Micron 4GB DDR4-3200 288Pin 512Mx16 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

US$31.00

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96D4-8G2933ER-MI
Micron 8G DDR4 2933 288PIN 1GbX8 REG 1.2V
  1. DDR4 2933Mhz Registered DIMM
  2. Supports ECC error detection and correction
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Provides better reliability, availability and serviceability (RAS) and improves data integrity

US$97.00

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96D4-8G3200NN-MI
Micron 8GB DDR4-3200 288Pin 1Gx8 1.2V Unbuffered
  1. DDR4 3200Mhz Unbuffered DIMM
  2. 1.2V Power Consumption
  3. Low-power auto self- refresh (LPASR)
  4. Data bus inversion (DBI) for data bus
  5. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

US$56.00

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AQD-D4U16N24-SE
MEMORY MODULE, 16G DDR4-2400 1GX8 1.2V SAM
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

US$160.00

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AQD-D4U4GN24-SG
MEMORY MODULE, 4G DDR4-2400 512X8 1.2V SAM
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

US$65.00

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AQD-D4U8GN24-SE
MEMORY MODULE, 8G DDR4-2400 1GX8 1.2V SAM
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

US$79.00

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